Hafnium-Zirconium Oxide Hf0.5Zr0.5O2 PLD Target
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Hafnium-Zirconium Oxide Hf0.5Zr0.5O2 PLD Target

$395.00
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Material Hafnium-Zirconium Oxide 50:50, (HZO) Formula Hf0.5Zr0.5O2  Purity 99.95% Typical Substrates Silicon (Si), Quartz, Mica, Sapphire (Al2O3) Related Materials HfO2, Pb(Zr,Ti)O3, BaTiO3, KNbO3, BiFeO3, LaAlO3 Hf0.5Zr0.5O2 Thin Films Hafnium zirconium oxide (Hf0.5Zr0.5O2) is a mixed oxide material that combines the properties of HfO2 and ZrO2.  In ferroelectric applications, Hf0.5Zr0.5O2 thin films exhibit a high remnant polarization and a low coercive field, making them ideal for non-volatile memory applications. The ferroelectricity properties of Hf0.5Zr0.5O2 are still under investigation, but recent studies have shown promising results. Similar to other ferroelectric materials, ferroelectricity in Hf0.5Zr0.5O2 is believed to be due to the spontaneous polarization of the material. This polarization can be controlled by doping or other modifications to the material's crystal structure. Compared to pure HfO2, Hf0.5Zr0.5O2 has a higher dielectric constant and a lower

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