Gallium Oxide Ga2O3 PLD Target

Material Gallium Oxide Formula Ga2O3 Purity 99.95% Typical Substrates Al2O3, Si Related Materials In2O3, ZnO, ITO, TiO2 Introduction to Ga2O3 Thin Films Gallium oxide (Ga2O3) is a wide-bandgap semiconductor material that has received significant attention due to its unique electronic and optical properties. In thin film form, Ga2O3 has potential applications in power electronics, sensors, and optoelectronics. Optical and Electronic Properties of Ga2O3 Ga2O3 exhibits a bandgap of ~4.9 eV, which is higher than that of other wide-bandgap materials such as SiC and GaN. It also has a high electron mobility of up to 200 cm^2/Vs, making it suitable for high-frequency applications. Ga2O3 thin films also exhibit high transparency in the UV region, which makes it useful for UV photodetectors and solar blind photodetectors. Comparison to Similar Materials Compared to other similar materials, such as Al2O3 and ZnO, Ga2O3 exhibits higher electron mobility and thermal stability, maki