Hafnium Oxide HfO2 PLD Target

Material Hafnium Oxide, Hafnia Formula HfO2 Purity 99.95% Typical Substrates Silicon (Si), Quartz, Mica, Sapphire (Al2O3) Related Materials BaTiO3, KNbO3, BiFeO3, Pb(Zr,Ti)O3, LaAlO3, Al2O3, HfSiO4, TiO2, SiO2, ZrO2 Introduction to HfO2 Thin Films Hafnium dioxide (HfO2) is a high-k dielectric material with a wide bandgap and high thermal stability, making it an attractive material for thin film applications. HfO2 thin films have been extensively studied for their use in ferroelectric and dielectric applications. In ferroelectric applications, HfO2 thin films exhibit a high remnant polarization and a low coercive field, making them ideal for non-volatile memory applications. The ferroelectricity properties of HfO2 are still under investigation, but recent studies have shown promising results. Compared to lead zirconate titanate (PZT), which is a commonly used ferroelectric material, HfO2 has a higher breakdown strength and a lower leakage current, making it more suitable