Zirconia + 2% HfO2 (ZrO2 + 2% HfO2) PLD Target

Material Hafnia Stabilized Zirconium Oxide  Formula ZrO2 + 2% HfO2 Common substrates Silicon, Silicon Dioxide, Silicon Nitride, Lanthanum Aluminum Oxide, Strontium Titanate Similar Materials Al2O3 and HfO2 Crystal Structure Ceramic Introduction Hafnia Stabilized Zirconium Oxide (HZO) is a ceramic material commonly used as a dielectric material in electronic devices. HZO thin films have unique properties that make them suitable for use in various applications such as capacitors, memory devices, and sensors. The addition of hafnium oxide (HfO2) stabilizes the crystal structure of zirconium oxide (ZrO2) and improves its electrical properties. HZO thin films can also be used as a high-k dielectric material in complementary metal-oxide-semiconductor (CMOS) devices. Optical and Electrical Properties of Hafnia Stabilized Zirconium Oxide HZO thin films have a high dielectric constant (k), low leakage current, and high breakdown strength, making them suitable for use as