M03900 - SEMI M39 - Test Method for Measuring Resistivity and Hall Coefficient and Determining Hall Mobility in Semi-Insulating GaAs Single Crystals

This test method was technically approved by the global Compound Semiconductor Committee and is the direct responsibility of the Japanese Compound Semiconductor Committee. Current edition approved by the Japanese Regional Standards Committee on June 1, 1999. Initially available at www.semi.org August 1999; to be published September 1999.   The purpose of this document is to specify a method to measure resistivity and determine Hall mobility of semi-insulating GaAs single crystals by the Van der Pauw method. Especially, this document specifies a simple and practical method for commercial semi-insulating GaAs single crystals. 　Referenced SEMI StandardsNone.