M09200 - SEMI M92 - Specification for 4H-SIC Homoepitaxial Wafer

 1  Purpose1.1  This Specification covers requirements for 4H-SiC homoepitaxial wafers used in power device manufacturing.1.2  This Specification provides a uniform standard of 4H-SiC homoepitaxial wafers for the suppliers and the customers in the industrial chain.2  Scope2.1  This Specification specifies the parameters of 4H-SiC homoepitaxial wafers with a single epitaxial layer grown on an n-type substrate, up to and including 30 µm total thickness.2.2  Dimensional requirements are provided for the following categories of epitaxial wafers:• 100.0 mm 4H-SiC epitaxial wafers• 150.0 mm 4H-SiC epitaxial wafers Referenced SEMI Standards (purchase separately)SEMI M1 — Specification for Polished Single Crystal Silicon WafersSEMI M40 — Guide for Measurement of Roughness of Planar Surfaces on Polished WafersSEMI M55 — Specification for Polished Monocrystalline Silicon Carbide WafersSEMI M59 — Terminology for Silicon TechnologySEMI M81 — Guide to Defects Found on Monocrystalline Silicon Carbide SubstratesSEMI M83 — Test Method for Determination of Dislocation Etch Pit Density in Monocrystals of III-V Compound SemiconductorsSEMI MF26 — Test Method for Determining the Orientation of a Semiconductive Single CrystalSEMI MF95 — Test Method for Thickness of Lightly Doped Silicon Epitaxial Layers on Heavily Doped Silicon Substrates Using an Infrared Dispersive SpectrophotometerSEMI MF523 — Practice for Unaided Visual Inspection of Polished Silicon Wafer SurfacesSEMI MF533 — Test Method for Thickness and Thickness Variation of Silicon WafersSEMI MF671 — Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic MaterialsSEMI MF673 — Test Method for Measuring Resistivity of Semiconductor Wafers or Sheet Resistance of Semiconductor Films with a Noncontact Eddy-Current GaugeSEMI MF847 — Test Method for Measuring Crystallographic Orientation of Flats on Single Crystal Silicon Wafers by X-Ray TechniquesSEMI MF1390 — Test Method for Measuring Bow and Warp on Silicon Wafers by Automated Noncontact ScanningSEMI MF1392 —Test Method for Determining Net Carrier Density Profiles in Silicon Wafers By Capacitance-Voltage Measurements with a Mercury ProbeSEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon Wafer by Automated Noncontact ScanningSEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor Wafers Revision HistorySEMI M92-0824 (technical revision)SEMI M92-0423 (first published)