3D01600 - SEMI 3D16 - Specification for Glass Base Material for Semiconductor Packaging

This Specification is intended to address the needs of the 3D Stacked IC (3DS-IC) industry by providing the tools needed to procure glass as base material to be used in a 3DS-IC process or in similar applications. Such glass may be specified with or without openings for through glass vias (TGV) or blind vias (BV). This Specification describes dimensional and thermal characteristics of glass base material for interposers, RF devices, and other similar packaging substrates. This Specification also applies to openings in glass. The glass substrate is in shape of a wafer (round) or a panel (square or rectangular). If present, the openings of the glass substrate may be intended to be further processed with metal fillings. The glass substrate is intended to remain permanently in the package or device. Methods of measurements suitable for determining the characteristics in this Specification are indicated. Referenced SEMI Standards (purchase separately)SEMI 3D7 — Guide for Alignment Mark for 3DS-IC ProcessSEMI 3D11 — Terminology for Through Glass Via and Blind Via in Glass Geometrical MetrologySEMI 3D12 — Guide on Measuring Flatness and Shape of Low Stiffness SubstratesSEMI E119 — Mechanical Specification for Reduced-Pitch Front-Opening Box for Interfactory Transport of 300 mm WafersSEMI G90 — Specification for 300 mm Wafer Coin-Stack Type Shipping Container Used for Test and Packaging ProcessesSEMI M12 — Specification for Serial Alphanumeric Marking of the Front Surface of WafersSEMI M31 — Mechanical Specification for Front-Opening Shipping Box Used to Transport and Ship 300 mm WafersSEMI M35 — Guide for Developing Specifications for Silicon Wafer Surface Features Detected by Automated InspectionSEMI M40 — Guide for Measurement of Roughness of Planar Surfaces on Polished WafersSEMI M45 — Specification for 300 mm Wafer Shipping SystemSEMI M59 — Terminology for Silicon TechnologySEMI MF533 — Test Method for Thickness and Thickness Variation of Silicon WafersSEMI MF657 — Test Method for Measuring Warp and Total Thickness Variation on Silicon Wafers by Noncontact ScanningSEMI MF671 — Test Method for Measuring Flat Length on Wafers of Silicon and Other Electronic MaterialsSEMI MF928 — Test Method for Edge Contour of Circular Semiconductor Wafers and Rigid Disk SubstratesSEMI MF1152 — Test Method for Dimensions of Notches on Silicon WafersSEMI MF1390 — Test Method for Measuring Bow and Warp on Silicon Wafers by Automated Noncontact ScanningSEMI MF1451 — Test Method for Measuring Sori on Silicon Wafers by Automated Noncontact ScanningSEMI MF1530 — Test Method for Measuring Flatness, Thickness, and Total Thickness Variation on Silicon Wafers by Automated Noncontact ScanningSEMI MF2074 — Guide for Measuring Diameter of Silicon and Other Semiconductor WafersSEMI MS1 — Guide to Specifying Wafer-Wafer Bonding Alignment TargetsSEMI T7 — Specification for Back Surface Marking of Double-sided Polished Wafers with a Two-Dimensional Matrix Code SymbolRevision HistorySEMI 3D16-0822 (technical revision)SEMI 3D16-1116 (first published)