HMA82GS7CJR8N-VK Hynix 32GB (16GBx2) PC4-21300 DDR4-2666MHz ECC Unbuffered CL19 260-Pin SoDimm Memory

HMA82GS7CJR8N-VK Hynix 32GB (16GBx2) PC4-21300 DDR4-2666MHz ECC Unbuffered CL19 260-Pin SoDimm 1.2V Dual Rank Memory Module   Features   Power Supply: VDD=1.2V (1.14V to 1.26V) VDDQ = 1.2V (1.14V to 1.26V) VPP - 2.5V (2.375V to 2.75V) VDDSPD=2.25V to 3.6V Functionality and operations comply with the DDR4 SDRAM datasheet 16 internal banks Bank Grouping is applied, and CAS to CAS latency (tCCD_L, tCCD_S) for the banks in the same or different bank group accesses are available Data transfer rates: PC4-3200, PC4-2933, PC4-2400, PC4-2133. PC4-1866, PC4-1600 Bi-Directional Differential Data Strobe 8 bit pre-fetch Burst Length (BL) switch on-the-fly BL8 or BC4(Burst Chop) Supports ECC error correction and detection On-Die Termination (ODT) Temperature sensor with integrated SPD This product is in compliance with the RoHS directive. Per DRAM Addressability is supported Internal Vref DQ level generation is available