5pcs IRF9540 IRF9540N P-Channel Power MOSFET 23A 100V TO-220 IR Transistor

Type of Transistor: MOSFET Type of Control Channel: P -Channel Maximum Power Dissipation (Pd): 150 W Maximum Drain-Source Voltage |Vds|: 100 V Maximum Gate-Source Voltage |Vgs|: 20 V Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V Maximum Drain Current |Id|: 19 A Maximum Junction Temperature (Tj): 175 °C Total Gate Charge (Qg): 61 nC Maximum Drain-Source On-State Resistance (Rds): 0.2 Ohm Package: TO-220   - Advanced Process Technology - Dynamic dv/dt Rating - 175°C Operating Temperature - Fast Switching - P-Channel - Fully Avalanche Rated   Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.   Package Included: 5 x IRF9540