10pcs IRF3205 IR MOSFET N-CHANNEL 55V/110A TO-220 HEXFET Power Transistor IRF

Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description: Advanced HEXFET® Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieveextremely low on-resistance per silicon area. Thisbenefit, combined with the fast switching speed andruggedized device design that HEXFET power MOSFETsare well known for, provides the designer with an extremelyefficient and reliable device for use in a wide variety ofapplications.The TO-220 package is universally preferred for allcommercial-industrial applications at power dissipationlevels to approximately 50 watts. The low thermalresistance and low package cost of the TO-220 contributeto its wide acceptance throughout the industry. Datasheet Package Included: 10 x IRF3205 IR MOSFET N-CHANNEL HEXFET Power Transistor